Abstract: We have evaluated an artificial retina using thin-film transistors driven by wireless power supply. It is found that the illumination profile can be correctly. Jul 26, PDF | We have evaluated an artificial retina using thin-film transistors driven by wireless power supply. It is found that the illumination profile. PDF | An artificial retina using thin-film photodiodes (TFPDs) and thin-film transistors (TFTs) is KEYWORDS: artiﬁcial retina, thin-ﬁlm photodiode, thin-ﬁlm transistor, in-pixel operation, Recently, the transfer technology of TFTs called surface.
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P Artificial Retina using Poly-Si Thin-Film Transistors driven by Joint Research Center for Science and Technology, Ryukoku University, Seta, Otsu, Japan. Feb 9, A retinal implant is a biomedical implant technology currently being Artificial Retina using Thin-Film Transistors (TFTs) is fabricated on. A retinal implant is a biomedical implant technology currently being devel- oped by a Artificial Retina using Thin-Film Transistors (TFTs) is fabricated on trans- . terney.info terney.info terney.info terney.info
If you previously downloadd this article, Log in to Readcube. Log out of Readcube. Click on an option below to access. Log out of ReadCube. It is found that the illumination profile can be correctly detected as the output voltage profile even if it is driven using unstable power source generated by inductive coupling, diode bridge, and Zener diodes.
This means the feasibility to implant the artificial retina into human eyeballs. Volume 42 , Issue 1. Please check your email for instructions on resetting your password. If you do not receive an email within 10 minutes, your email address may not be registered, and you may need to create a new Wiley Online Library account.
If the address matches an existing account you will receive an email with instructions to retrieve your username. Mutsumi Kimura Dept. First published: Tools Request permission Export citation Add to favorites Track citation.
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Share full text access. Please review our Terms and Conditions of Use and check box below to share full-text version of article. Get access to the full version of this article. View access options below. You previously downloadd this article through ReadCube. Institutional Login. Copyright John Wiley and Sons 3. Sol-gel chemistry is an approach to synthesize materials through a phase transformation from liquid precursors to a sol known as a colloidal suspension and finally to a gel which is a network structure.
However, it was not until the last decade that investigation on sol-gel metal oxides has been rapidly advancing. As depicted in Figures 3 a and 3 b , the metal cations undergo a hydrolysis reaction through the loss of a proton by the water molecules, leading to metal hydroxides. Subsequently, the condensation reaction occurs to form oxide M-O-M frameworks through an oxolation reaction between metal hydroxides Figure 3 c.
Sol-gel chemistry in metal oxide materials. Representative chemical reactions are shown for b hydrolysis and c condensation. According to previous investigation, the high temperature annealed oxide thin films were composed primarily of oxide M-O-M framework.
However, the low temperature annealed one contained large amounts of metal hydroxides M-OH. Unfortunately, the high-temperature annealing process is not compatible with the flexible substrates.
Thus, for the full realization of flexible and large-area oxide electronics, it is essential to develop low-temperature solution-processed techniques. Figure 4 shows the schematic diagram of low-temperature approaches for solution-processed oxide TFTs. In general, two main routes have been developed to lower the post-annealing temperature: 1 novel precursor approaches and 2 innovative post-treatment methods.
The first route includes alkoxide precursors, combustion chemistry, and aqueous precursors, etc. Table 1 and Figure 5 summarize the recent advances of low-temperature solution-processed n-type metal oxide TFTs.
Schematic diagram of low-temperature approaches for solution-processed oxide TFTs. Figure 5.
Recent advances of low-temperature solution-processed n-type metal oxide TFTs 3. This approach demonstrates for the first time that solution-processed metal oxide TFTs with good device performance can be achieved at low processing temperature.
One of the drawbacks of the method is that the metal alkoxide precursors are unstable and require a complicated synthesis process.
Combustion chemistry approach: In , Marks, et al. The self-generated heat by this combustion method converts the precursors into metal oxide lattices efficiently, eliminating the need for external high temperature annealing process.
Combustion reaction of metal oxide precursors with fuel and oxidizer additives for low temperature processing. Copyright Nature publishing group In , the same group reported an efficient low-temperature solution-based oxide thin film growth method by combining combustion synthesis and spray coating.